The use of extracted BSIM3v3 MOS parameters for quick manual design
暂无分享，去创建一个
This work describes a new methodology for the extraction of DC parameters from BSIM3v3 MOS transistors. It takes into account some short channel effects not considered in the simplified level 1 model, thus providing corrections for the traditional MOS transconductance equations g/sub m/ and g/sub o/. The parameters are obtained using the minimum square method. The results show that the proposed method improves the precision of manual transistors' dimensions' calculations.
[1] P. R. Karlsson,et al. An analytical strategy for fast extraction of MOS transistor DC parameters applied to the SPICE M)53 and BSIM models , 1992, ICMTS 92 Proceedings of the 1992 International Conference on Microelectronic Test Structures.
[2] Paul G. Hoel,et al. Elementary statistics , 1971 .
[3] Y. Tsividis. Operation and modeling of the MOS transistor , 1987 .
[4] Kenneth R. Laker,et al. Design of analog integrated circuits and systems , 1994 .