Surface Brillouin scattering measurement of the elastic constants of single crystal InAs0.91Sb0.09
暂无分享,去创建一个
[1] A. Every,et al. Characteristic wave speeds in the surface Brillouin scattering measurement of elastic constants of crystals , 2010 .
[2] J. R. Botha,et al. Characterisation of InAs-based epilayers by FTIR spectroscopy , 2008 .
[3] R. M. Biefeld. The preparation of InSb and InAs1−x Sbx by metalorganic chemical vapor deposition , 1986 .
[4] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.
[5] Johannes R. Botha,et al. Electrical properties of undoped and doped MOVPE-grown InAsSb , 2007 .