论文信息 - Device design considerations for ion implanted MOSFETs - 字舞流文

Device design considerations for ion implanted MOSFETs

V. L. Rideout | F. H. Gaensslen | A. LeBlanc

[1] E. Bassous,et al. Ion implanted MOSFETs with very short channel lengths , 1973 .

[2] D. P. Kennedy,et al. Steady state mathematical theory for the insulated gate field effect transistor , 1973 .

[3] R. M. Swanson,et al. Ion-implanted complementary MOS transistors in low-voltage circuits , 1972 .