论文信息 - High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching - 字舞流文

High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching

S. Saddow | J. Casady | J. Cooper | M. Capano | M. Mazzola | John R. Williams | T. Isaacs-Smith | A. Hsieh | T. Isaacs-smith