Passivating contacts for silicon solar cells with 800 °C stability based on tunnel-oxide and highly crystalline thin silicon layer
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A. Fejfar | C. Ballif | M. Despeisse | P. Loper | M. Ledinský | P. Wyss | J. Stuckelberger | G. Nogay | M. Lehmann | C. Allébe | F. Debrot | Franz-Joseph Haug