论文信息 - Design and control of interface reaction between Al-based dielectrics and AlGaN layer in AlGaN/GaN metal-oxide-semiconductor structures - 字舞流文

Design and control of interface reaction between Al-based dielectrics and AlGaN layer in AlGaN/GaN metal-oxide-semiconductor structures

A. Yoshigoe | Heiji Watanabe | Takahiro Yamada | Y. Anda | T. Ueda | S. Nakazawa | M. Ishida | T. Shimura | M. Nozaki | T. Hosoi | Kenta Watanabe