Electron Microscopy of Defects in Epitaxical β‐SiC Thin Films Grown on Silicon and Carbon {0001} Faces of α‐SiC Substrates

Defects present in β-SiC thin films epitaxically grown on hexagonal 6Hα-SiC substrates via chemical vapor deposition have been characterized by transmission electron microscopy. These defects are different from those previously observed in β-SiC films grown on (100) silicon, which were predominantly stacking faults and microtwins. The most common defects in the films grown on α-SiC were large domains rotated 60° with respect to each other and were identified as double positioning boundaries. These boundaries are a special type of incoherent twin boundary. Differences observed in films grown on either the silicon or carbon face of the {0001}α-SiC are characterized as a function of the mechanism of formation of the defects and type of substrate used for growth.

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