论文信息 - Power Harvesting Circuits in 90 nm CMOS

Power Harvesting Circuits in 90 nm CMOS

The purpose of this paper is to explore power harvesting capabilities in nanometer technology. Novel charge pump improvements using the back-gate or well of MOS devices improve efficiency as well as sensitivity. The proposed circuits are implemented in 90 nm CMOS. Measured performance will be provided.

H.A. Hjortland | T.S. Lande | T.K. Halvorsen

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