论文信息 - Scanning Cathodoluminescence Microscopy of Polycrystalline GaAs - 字舞流文

Scanning Cathodoluminescence Microscopy of Polycrystalline GaAs

R. Gale | J. Salerno | J. C. Fan | J. Vaughan

[1] J. Harris,et al. Schottky barrier behavior in polycrystal GaAs , 1980 .

[2] J. J. Yang,et al. Electrical properties of polycrystalline GaAs films , 1980 .

[3] J. Salerno,et al. Infrared electroluminescence as a diagnostic tool for polycrystalline GaAs solar cells , 1980 .

[4] D. K. Wagner,et al. Study of grain boundaries in GaAs by scanning light microscopy , 1980 .

[5] E. Yang,et al. Transition with grain size from electrode-limited to bulk-limited conduction in polycrystalline semiconductors , 1980 .

[6] L. Eastman,et al. Characterization of grain boundaries using deep level transient spectroscopy , 1979 .

[7] D. Kyser,et al. Measurement of Diffusion Lengths in Direct‐Gap Semiconductors by Electron‐Beam Excitation , 1967 .