论文信息 - The in situ Studies on the Anomalous Domain Switching Caused by Trace Amount of Oxygen Vacancies

The in situ Studies on the Anomalous Domain Switching Caused by Trace Amount of Oxygen Vacancies

1. Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, NY, USA. 2. School of Materials Science and Engineering, Tsinghua University, Beijing, P. R. China. 3. Department of Engineering Physics, Zhengzhou University, Zhengzhou, Henan, P. R. China. 4. Canadian Centre for Electron Microscopy and Department of Materials Science and Engineering, McMaster University, Hamilton, ON, Canada. * Corresponding author: zhu@bnl.gov

[1] Qinghua Zhang,et al. Revealing the Effects of Trace Oxygen Vacancies on Improper Ferroelectric Manganite with In Situ Biasing , 2019, Advanced Electronic Materials.

[2] C. Nan,et al. Interface reconstruction with emerging charge ordering in hexagonal manganite , 2018, Science Advances.

[3] Xianlong Wei,et al. 1D Piezoelectric Material Based Nanogenerators: Methods, Materials and Property Optimization , 2018, Nanomaterials.

[4] Xianlong Wei,et al. Mechanical Properties of 2D Materials Studied by In Situ Microscopy Techniques , 2018 .

[5] Shiqing Deng,et al. Topologically Allowed Nonsixfold Vortices in a Sixfold Multiferroic Material: Observation and Classification. , 2017, Physical review letters.