Low pressure chemical vapour deposition of tantalum pentoxide thin layers

Abstract Tantalum pentoxide thin films were grown by a low pressure chemical vapour deposition process using a metalorganic tantalum precursor material. After characterizing the deposition process, the stoichiometry, structure and electrical properties of the tantalum oxide thin films were investigated before and after annealing in oxygen and nitrogen at various temperatures. At annealing temperatures higher than 700°C, the as-deposited amorphous film becomes polycrystalline. Refractive index, dielectric permittivity and leakage current behaviour are improved by this phase transition.