A new technique for characterization of the "End" resistance in modulation-doped FET's
暂无分享,去创建一个
Kwyro Lee | A. van der Ziel | M. Shur | G. Robinson | A. Valois | M.S. Shur | A. van der Ziel | A.J. Valois | G.Y. Robinson | X.C. Zhu | X.C. Zhu
[1] K.W. Lee,et al. A new interpretation of "End" resistance measurements , 1984, IEEE Electron Device Letters.
[2] H. Morkoc,et al. Current—Voltage and capacitance—Voltage characteristics of modulation-doped field-effect transistors , 1983, IEEE Transactions on Electron Devices.
[3] H. Morkoc,et al. Model for modulation doped field effect transistor , 1982, IEEE Electron Device Letters.
[4] M. Shur,et al. Parallel Conduction Correction to Measured Room Temperature Mobility in (Al, Ga)As–GaAs Modulation Doped Layers , 1984 .
[5] D. Delagebeaudeuf,et al. New method for determining the series resistances in a MESFET or TEGFET , 1983 .
[6] H. Morkoc,et al. Parasitic MESFET in (Al, Ga) As/GaAs modulation doped FET's and MODFET characterization , 1984, IEEE Transactions on Electron Devices.
[7] D. Delagebeaudeuf,et al. Planar enhancement mode two-dimensional electron gas FET associated with a low AlGaAs surface potential , 1982 .
[8] C.P. Lee,et al. IIA-7 ultra high speed integrated circuits using GaAs/GaAlAs high electron mobility transistors , 1983, IEEE Transactions on Electron Devices.