Absorption Coefficient and Refractive Index of GaN, AlN and AlGaN Alloys
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John F. Muth | J. F. Schetzina | Mark Johnson | R. M. Kolbas | J. D. Brown | J. W. Cook | J. Muth | R. Kolbas | J. Schetzina | Z. Yu | Z. Yu | J. Brown | J. Cook | Mark L. Johnson
[1] C. Tanguy. Refractive index of direct bandgap semiconductors near the absorption threshold: influence of excitonic effects , 1996 .
[2] F. Abelès,et al. Méthode de calcul des constantes optiques des couches minces absorbantes à partir de mesures de réflexion et de transmission , 1966 .
[3] Isamu Akasaki,et al. Energy band‐gap bowing parameter in an AlxGa1−x N alloy , 1987 .
[4] R. J. Elliott,et al. Intensity of Optical Absorption by Excitons , 1957 .
[5] R. Swanepoel. Determination of the thickness and optical constants of amorphous silicon , 1983 .
[6] Shuji Nakamura,et al. The Blue Laser Diode: GaN based Light Emitters and Lasers , 1997 .
[7] R. Swanepoel,et al. Determination of surface roughness and optical constants of inhomogeneous amorphous silicon films , 1984 .
[8] 小出 康夫,et al. The Blue Laser Diode , 1998 .
[9] S. Nakamura,et al. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes , 1996 .
[10] I. Akasaki,et al. Epitaxial Growth and Properties of Al x Ga1 − x N by MOVPE , 1986 .
[11] S. H. Wemple,et al. Optical transmission through multilayered structures. , 1973, Applied optics.
[12] M. Sturge. Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV , 1962 .
[13] J. Szczyrbowski,et al. Determination of optical constants of real thin films , 1978 .