Spatio-Temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms
暂无分享,去创建一个
Nagarajan Raghavan | Kin Leong Pey | Andrea Padovani | Joel Molina Reyes | Felix Palumbo | Alok Ranjan | Mario Debray | Fernando Leonel Aguirre | Nahuel Vega | Nahuel Muller | Sebastián Matías Pazos | A. Padovani | K. Pey | N. Raghavan | F. Palumbo | A. Ranjan | F. Aguirre | S. Pazos | M. Debray | N. Vega | N. Muller | J. Reyes
[1] Jordi Suñé,et al. On the breakdown statistics of very thin SiO2 films , 1990 .
[2] K. Pey,et al. Modified Percolation Model for Polycrystalline High-$ \kappa$ Gate Stack With Grain Boundary Defects , 2011, IEEE Electron Device Letters.
[3] K.J.S. Cave,et al. MOS (Metal Oxide Semiconductor) Physics and Technology , 1983 .
[4] Cheryl J. Dale,et al. Displacement damage equivalent to dose in silicon devices , 1989 .
[5] K. Awazu,et al. Structure of latent tracks created by swift heavy-ion bombardment of amorphous SiO 2 , 2000 .
[6] G. Bersuker,et al. Electron-Injection-Assisted Generation of Oxygen Vacancies in Monoclinic HfO2 , 2015 .
[7] J. Gasiot,et al. Growth of silicon bump induced by swift heavy ion at the silicon oxide-silicon interface , 2006 .
[8] C. Trautmann,et al. Track formation and fabrication of nanostructures with MeV-ion beams , 2004 .
[9] F. Guarín,et al. Evolution of the gate current in 32 nm MOSFETs under irradiation , 2016 .
[10] Meftah,et al. Track formation in SiO2 quartz and the thermal-spike mechanism. , 1994, Physical review. B, Condensed matter.
[11] M. Porti,et al. Using AFM Related Techniques for the Nanoscale Electrical Characterization of Irradiated Ultrathin Gate Oxides , 2007, IEEE Transactions on Nuclear Science.
[12] K. Pey,et al. Multiphysics based 3D percolation framework model for multi-stage degradation and breakdown in high-κ — Interfacial layer stacks , 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).
[13] Nagarajan Raghavan,et al. Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics , 2013 .
[14] J. Stathis,et al. Dielectric breakdown mechanisms in gate oxides , 2005 .
[15] Jordi Suñé,et al. On the Weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination. Part II: experimental results and the effects of stress conditions , 2002 .
[16] D. Fink,et al. Etched ion tracks in silicon oxide and silicon oxynitride as charge injection or extraction channels for novel electronic structures , 2004 .
[17] Elke Wendler,et al. Effect of high electronic energy deposition in semiconductors , 2004 .
[18] G. Bersuker,et al. Modelling of oxygen vacancy aggregates in monoclinic HfO2: can they contribute to conductive filament formation? , 2015, Journal of physics. Condensed matter : an Institute of Physics journal.
[19] J. Ziegler,et al. SRIM – The stopping and range of ions in matter (2010) , 2010 .
[20] J. McPherson,et al. Thermochemical description of dielectric breakdown in high dielectric constant materials , 2003 .
[21] James H. Stathis,et al. Reliability limits for the gate insulator in CMOS technology , 2002, IBM J. Res. Dev..
[22] N. Raghavan,et al. New statistical model to decode the reliability and weibull slope of high-κ and interfacial layer in a dual layer dielectric stack , 2010, 2010 IEEE International Reliability Physics Symposium.
[23] P. McIntyre,et al. New method for determining flat-band voltage in high mobility semiconductors , 2013 .
[24] S. Bhoraskar,et al. Swift heavy ion induced growth of nanocrystalline silicon in silicon oxide , 2003 .
[25] Luca Larcher,et al. Time-dependent dielectric breakdown statistics in SiO2 and HfO2 dielectrics: Insights from a multi-scale modeling approach , 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).
[26] Alexander L. Shluger,et al. A microscopic mechanism of dielectric breakdown in SiO2 films: An insight from multi-scale modeling , 2017 .
[27] Guido Groeseneken,et al. Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction , 1999 .
[28] H.W. Kraner,et al. Radiation detection and measurement , 1981, Proceedings of the IEEE.
[29] T. Das,et al. An extension of the Curie-von Schweidler law for the leakage current decay in MIS structures including progressive breakdown , 2011, Microelectron. Reliab..
[30] Matthew Watkins,et al. Identification of intrinsic electron trapping sites in bulk amorphous silica from ab initio calculations , 2013 .
[31] R. Stoller,et al. On the use of SRIM for computing radiation damage exposure , 2013 .
[32] Martin L. Green,et al. Precursor ion damage and angular dependence of single event gate rupture in thin oxides , 1998 .
[33] Susanne Stemmer,et al. Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces , 2010 .
[34] G. Groeseneken,et al. A New TDDB Reliability Prediction Methodology Accounting for Multiple SBD and Wear Out , 2009, IEEE Transactions on Electron Devices.
[35] Bin Wang,et al. Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation , 2002 .
[36] A. Candelori,et al. Heavy ion irradiation of thin gate oxides , 2000 .
[37] F. Saigné,et al. Discontinuous ion tracks on silicon oxide on silicon surfaces after grazing-angle heavy ion irradiation , 2007 .
[38] Pablo Sergio Mandolesi,et al. Diagnose of radiation induced single event effects in a PLL using a heavy ion microbeam , 2013, 2013 14th Latin American Test Workshop - LATW.
[39] Guido Groeseneken,et al. New insights in the relation between electron trap generation and the statistical properties of oxide breakdown , 1998 .
[40] Salvatore Lombardo,et al. Physical mechanism of progressive breakdown in gate oxides , 2014 .
[41] James H. Stathis,et al. Modeling of time-dependent non-uniform dielectric breakdown using a clustering statistical approach , 2013 .
[42] M. Porti,et al. Grain boundary-driven leakage path formation in HfO2 dielectrics , 2011, 2010 Proceedings of the European Solid State Device Research Conference.
[43] R. Degraeve,et al. Low Weibull slope of breakdown distributions in high-k layers , 2002, IEEE Electron Device Letters.
[44] J. R. Srour,et al. Review of displacement damage effects in silicon devices , 2003 .
[45] T. Kauerauf,et al. Time-Dependent Dielectric Breakdown and Stress-Induced Leakage Current Characteristics of 0.7-nm-EOT $\hbox{HfO}_{2}$ pFETs , 2011, IEEE Transactions on Device and Materials Reliability.
[46] L. Larcher,et al. Microscopic Modeling of Electrical Stress-Induced Breakdown in Poly-Crystalline Hafnium Oxide Dielectrics , 2013, IEEE Transactions on Electron Devices.