Electrical characteristics of carbon-doped GaAs
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Seong-Il Kim | Y. Kim | S. Min | Moo-Sung Kim | Choochon Lee | K. Eom
[1] Yong Kim,et al. Characteristics of heavily carbon-doped GaAs by LPMOCVD and critical layer thickness , 1993 .
[2] D. G. Weir,et al. Carbon doping of MBE GaAs and Ga0.7Al0.3As films using a graphite filament , 1991 .
[3] Z. Lu,et al. Very high carbon incorporation in metalorganic vapor phase epitaxy of heavily doped p‐type GaAs , 1991 .
[4] T. Noda,et al. LPMOCVD growth of C doped GaAs layers and AlGaAs/GaAs heterojunction bipolar transistors , 1991 .
[5] K. Eguchi,et al. Heavy carbon doping in metalorganic chemical vapor deposition for GaAs using a low V/III ratio , 1990 .
[6] M. Konagai,et al. Metallic p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy , 1989 .
[7] Brian T. Cunningham,et al. Carbon diffusion in undoped, n‐type, and p‐type GaAs , 1989 .
[8] H. Lüth,et al. The role of CH4 in metal organic chemical vapour deposition of GaAs , 1986 .
[9] T. Kuech,et al. Mechanism of carbon incorporation in MOCVD GaAs , 1984 .
[10] R. Glew. Zinc Doping of MOCVD GaAs , 1984 .
[11] C. Hilsum,et al. Simple empirical relationship between mobility and carrier concentration , 1974 .