Comprehensive dynamic analysis of wirebonding on Cu/low-K wafers
暂无分享,去创建一个
[1] Scott Chen,et al. Fine pitch probing and wirebonding and reliability of aluminum capped copper bond pads , 2000, 2000 Proceedings. 50th Electronic Components and Technology Conference (Cat. No.00CH37070).
[2] J. W. Brunner,et al. Optimization of wire bonding over Cu-low K pad stack , 2003 .
[3] Y. Miyahara,et al. Analysis and application of vibration behaviour for wirebonding capillary by transmission laser vibrometer , 1998, Twenty Third IEEE/CPMT International Electronics Manufacturing Technology Symposium (Cat. No.98CH36205).
[4] L. A. Lim,et al. Wire bonding process impact on low-k dielectric material in damascene copper integrated circuits , 2002, 52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345).
[5] J. Ramírez,et al. The effect of ultrasonic frequency on fine pitch aluminum wedge wirebond , 1996, 1996 Proceedings 46th Electronic Components and Technology Conference.
[6] R. G. McKenna,et al. High impact bonding to improve reliability of VLSI die in plastic packages , 1989, Proceedings., 39th Electronic Components Conference.
[7] K. Inoue,et al. Numerical analysis of fine lead bonding-effect of pad thickness on interfacial deformation , 1999 .
[8] Yi-Shao Lai,et al. Transient analysis of the impact stage of wirebonding on Cu/low-K wafers , 2005, Microelectron. Reliab..
[9] E. Beyne,et al. Mechanical FEM Simulation of bonding process on Cu lowK wafers , 2004, IEEE Transactions on Components and Packaging Technologies.
[10] H. Kudo,et al. Integration of organic low-k material with Cu-damascene employing novel process , 1998, Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102).