Modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET's

Abstract Short-channel effects on the subthreshold behavior are modeled for fully depleted Si-SOI MESFETs through an analytical solution of the two-dimensional Poisson equation in the subthreshold region. Based on the resultant minimum bottom potential caused by drain-induced barrier lowering, accurate analytical expressions for short-channel threshold voltage and subthreshold swing are derived. This model is verified by comparison to a two-dimensional device simulator, MEDICI, over a wide range of device parameters and bias conditions. Good agreement is obtained for channel lengths down to 0.2 μm.

[1]  Christos Papavassiliou,et al.  Microwave performance of GaAs-on-Si MESFETs with Si buffer layers , 1993 .

[2]  S. Veeraraghavan,et al.  Short-channel effects in SOI MOSFETs , 1989 .

[3]  Chin-Shan Hou,et al.  A 2-D analytic model for the threshold-voltage of fully depleted short gate-length Si-SOI MESFETs , 1995 .

[4]  T. Sugii,et al.  Scaling-parameter-dependent model for subthreshold swing S in double-gate SOI MOSFET's , 1994, IEEE Electron Device Letters.

[5]  J. D. Meindl,et al.  An analytical two-dimensional model for silicon MESFETs , 1988 .

[6]  K. K. Young.  Short-channel effect in fully depleted SOI MOSFETs , 1989 .

[7]  C. Rafferty,et al.  Effects of oxide interface traps and transient enhanced diffusion on the process modeling of PMOS devices , 1996 .

[8]  H. Norde,et al.  Complementary Si MESFET concept using silicon-on-sapphire technology , 1988, IEEE Electron Device Letters.

[9]  C.T.M. Chang,et al.  A subthreshold current model for GaAs MESFET's , 1987, IEEE Electron Device Letters.

[10]  G. Ghibaudo,et al.  Temperature dependence of drain-induced barrier lowering in deep submicrometre MOSFETs , 1994 .

[11]  A. Peczalski,et al.  Subthreshold current ion GaAs MESFETs , 1988, IEEE Electron Device Letters.

[12]  Ching-Yuan Wu,et al.  A new simplified threshold-voltage model for n-MOSFETs with nonuniformly doped substrate and its application to MOSFET's miniaturization , 1995 .

[13]  Maneesha,et al.  A device model for an ion-implanted MESFET with Half-Pearson and Half-Gaussian distribution under post-anneal conditions , 1994 .

[14]  Jason C. S. Woo,et al.  Subthreshold characteristics of fully depleted submicrometer SOI MOSFET's , 1995 .

[15]  Gerard Ghibaudo,et al.  Analytical models of subthreshold swing and threshold voltage for thin- and ultra-thin-film SOI MOSFETs , 1990 .

[16]  J.P. Krusius,et al.  Fabrication and analysis of 1/2µm Silicon logic MESFET's , 1983, IEEE Transactions on Electron Devices.

[17]  J. Sturm,et al.  Anomalous subthreshold slopes in thin-film accumulation-mode SOI p-channel MOSFET's , 1992 .

[18]  J. Plummer,et al.  Device physics and technology of complementary silicon MESFET's for VLSI applications , 1991 .

[19]  C. D. Hartgring,et al.  Silicon MESFET digital circuit techniques , 1981 .

[20]  V. K. De,et al.  An analytical threshold voltage and subthreshold current model for short-channel MESFETs , 1993 .

[22]  Hans-Oliver Joachim,et al.  Simulation and two-dimensional analytical modeling of subthreshold slope in ultrathin-film SOI MOSFETs down to 0.1 mu m gate length , 1993 .

[23]  A sub- and near-threshold current model for silicon MESFETs , 1988 .

[24]  M. Elmasry,et al.  On the scaling of Si-MESFETs , 1980, IEEE Electron Device Letters.

[25]  G. Burbach,et al.  MESFETs in thin silicon on SIMOX , 1989 .

[26]  B. B. Pal,et al.  Analytical modeling of an ion-implanted silicon MESFET in post-anneal condition , 1989 .

[27]  V. K. De,et al.  Short channel models and scaling limits of SOI and bulk MOSFETs , 1994, IEEE J. Solid State Circuits.