AlGaAs/GaAs/AlGaAs quantum wells as a sensitive tool for the MOVPE reactor environment

[1]  R. Hafenbrak,et al.  Low density MOVPE grown InGaAs QDs exhibiting ultra-narrow single exciton linewidths , 2010, Nanotechnology.

[2]  L. Mereni,et al.  A site-controlled quantum dot system offering both high uniformity and spectral purity , 2009, 0906.4066.

[3]  M. Raynor,et al.  Characterization of high-purity arsine and gallium arsenide epilayers grown by MOCVD , 2008 .

[4]  J. Faist,et al.  A terahertz quantum cascade. laser grown by low-pressure metalorganic vapor phase epitaxy , 2008 .

[5]  E. Kapon,et al.  Integration of site-controlled pyramidal quantum dots and photonic crystal membrane cavities , 2008, 2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science.

[6]  A. Rudra,et al.  Theory and experiment of step bunching on misoriented GaAs(001) during metalorganic vapor-phase epitaxy , 2008 .

[7]  K. Ensslin,et al.  Measurement of Rashba and Dresselhaus spin-orbit magnetic fields , 2007, 0709.2509.

[8]  E. Kapon,et al.  Transition from two-dimensional to three-dimensional quantum confinement in semiconductor quantum wires/quantum dots. , 2007, Nano letters.

[9]  E. Kapon,et al.  Site-controlled single quantum wire integrated into a photonic-crystal membrane microcavity , 2007 .

[10]  E. Kapon,et al.  Mechanisms of quantum dot energy engineering by metalorganic vapor phase epitaxy on patterned nonplanar substrates. , 2007, Nano letters.

[11]  S. Malzer,et al.  Atomic scale structure and optical emission of AlxGa1-xAs/GaAs quantum wells , 2007 .

[12]  D. Sanvitto,et al.  Spatial structure and stability of the macroscopically occupied polariton state in the microcavity optical parametric oscillator , 2006 .

[13]  N. Gogneau,et al.  Sub-meV photoluminescence linewidth and >106cm2∕Vs electron mobility in AlGaAs∕GaAs quantum wells grown by metalorganic vapor phase epitaxy on slightly misoriented substrates , 2006 .

[14]  A. Malko,et al.  Quantum Dot Exciton Dynamics Probed by Photon-Correlation Spectroscopy , 2006 .

[15]  N. Gogneau,et al.  Correlation between optical properties and interface morphology of GaAs∕AlGaAs quantum wells , 2006 .

[16]  V. Savona,et al.  Realistic heterointerface model for excitonic states in growth-interrupted GaAs quantum wells , 2006, cond-mat/0603105.

[17]  Y. Oreg,et al.  Luttinger-liquid behavior in weakly disordered quantum wires. , 2005, Physical review letters.

[18]  P. Renucci,et al.  Probing carrier dynamics in nanostructures by picosecond cathodoluminescence , 2005, Nature.

[19]  E. Kapon,et al.  Properties of GaAs/AlGaAs quantum wells grown by MOVPE using vicinal GaAs substrates , 2004 .

[20]  Scott W. Corzine,et al.  Low-threshold continuous-wave operation of quantum-cascade lasers grown by metalorganic vapor phase epitaxy , 2004 .

[21]  C. Mcgrew,et al.  Techniques for the measurement of trace moisture in high-purity electronic specialty gases , 2003 .

[22]  Luke R. Wilson,et al.  Quantum cascade lasers grown by metalorganic vapor phase epitaxy , 2003 .

[23]  E. Runge,et al.  Photoluminescence and radiative lifetime of trions in GaAs quantum wells , 2000 .

[24]  Wolfgang Stolz,et al.  C- and O-incorporation in (AlGa)As epitaxial layers grown by MOVPE using TBAs , 1998 .

[25]  H. Shtrikman,et al.  Near-Field Spectroscopy of a Gated Electron Gas , 1998, cond-mat/9807116.

[26]  Jan P. van der Ziel,et al.  Optical studies of very high-purity GaAs grown by metal–organic chemical-vapor deposition using a point-of-use arsine (AsH3) generator , 1997 .

[27]  E. Runge,et al.  Excitons in semiconductor nanostructures with disorder , 1997 .

[28]  Yamamoto,et al.  Exciton-polariton ladder in a semiconductor microcavity. , 1996, Physical review. B, Condensed matter.

[29]  B. E. Hammons,et al.  2×106 cm2/V s electron mobility by metalorganic chemical vapor deposition with tertiarybutylarsine , 1996 .

[30]  H. Yokoyama,et al.  Effects of interface flatness and abruptness on optical and electrical characteristics of GaAs/AlGaAs quantum structures grown by metalorganic vapor phase epitaxy , 1995 .

[31]  R. Zimmermann,et al.  Growth simulation of ternary quantum structures and their optical properties , 1995 .

[32]  Vinattieri,et al.  Exciton thermalization in quantum-well structures. , 1994, Physical review. B, Condensed matter.

[33]  J. Neff,et al.  Very smooth AlGaAs-GaAs quantum wells grown by metalorganic chemical vapor deposition , 1992 .

[34]  G. Bastard,et al.  Low-temperature exciton trapping on interface defects in semiconductor quantum wells , 1984 .