Electrical and reliability characteristics of oxide grown by high pressure oxidation of SiC in nitric acid vapor with different gas ambients
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[1] J. Hwu,et al. Thin silicon oxide films on N-type 4H-SiC prepared by scanning frequency anodization method , 2009 .
[2] Mrinal K. Das. 12b.4 Commercially Available Cree Silicon Carbide Power Devices: Historical Success of JBS Diodes and Future Power Switch Prospects , 2011 .
[3] H. Johnston,et al. Kinetics of the Thermal Decomposition of Nitric Acid Vapor. III. Low Pressure Results , 1955 .
[4] J. Cooper,et al. Time-dependent-dielectric-breakdown measurements of thermal oxides on n-type 6H-SiC , 1999 .
[5] M. Melloch,et al. Status and prospects for SiC power MOSFETs , 2002 .
[6] H. Johnston,et al. The Kinetics of the Thermal Decomposition of Nitric Acid Vapor , 1951 .
[7] Xiaobo Hu,et al. Thermal Oxidation of Silicon Carbide Substrates , 2009 .
[8] Sima Dimitrijev,et al. Physical Properties of N2O and NO-nitrided gate oxides grown on 4H-SiC , 2001 .
[9] Alan Mathewson,et al. Dielectric Reliability Measurement Methods: A Review , 1998 .
[10] Kenji Fukuda,et al. Effect of gate oxidation method on electrical properties of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC C(0001) face , 2004 .
[11] H. Matsunami. Current SiC technology for power electronic devices beyond Si , 2006 .
[12] M. Fujimoto,et al. Formation of atomically smooth SiO2/SiC interfaces at 120 C by use of nitric acid oxidation method , 2006 .
[13] J. R. Williams,et al. Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the oxide/(112̄0) 4H–SiC interface , 2004 .
[14] B. J. Baliga,et al. Power semiconductor device figure of merit for high-frequency applications , 1989, IEEE Electron Device Letters.
[15] Kenji Fukuda,et al. High-temperature post-oxidation annealing on the low-temperature oxide/4H-SiC(0001) , 2002 .
[16] Determination of deep ultrathin equivalent oxide thickness (EOT) from measuring flat-band C-V curve , 2002 .
[17] Anant K. Agarwal,et al. Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC , 2000 .
[18] Andre Stesmans,et al. Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation , 2003 .
[19] Leonard C. Feldman,et al. Modified Deal Grove model for the thermal oxidation of silicon carbide , 2004 .
[20] R. Johnson,et al. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review , 1996 .