Temperature effects on DC and small signal RF performance of AlGaAs/GaAs HEMTs

We here report on the DC and microwave performance of HEMTs tested on wafer under different temperature conditions. The relevant experimental data show that the most important electrical parameters, such as the output current, the threshold voltage, the transconductance and the forward transmission coefficient, are sensibly affected by thermal phenomena. We focused our attention on the variations of the above parameters with the temperature because such a detailed knowledge is essential to establish the optimum bias point for a given application. Furthermore, we analyze the influence of the DC quiescent point degradations, due to thermal phenomena, on the small signal equivalent circuit. Since the thermal behavior of the circuit model is a function of the bias, we examine the behavior of the circuit elements vs. temperature over a wide range of bias conditions.

[1]  Roberto Menozzi,et al.  The effect of hot electron stress on the DC and microwave characteristics of AlGaAs/InGaAs/GaAs PHEMTs , 1996 .

[2]  Shey-Shi Lu,et al.  The origin of the kink phenomenon of transistor scattering parameter S/sub 22/ , 2001 .

[3]  M. Wolny,et al.  Experimental analysis of HEMT behavior under low-temperature conditions , 1991 .

[4]  Juin J. Liou,et al.  A review of recent MOSFET threshold voltage extraction methods , 2002, Microelectron. Reliab..

[5]  Alina Caddemi,et al.  Characterization techniques for temperature-dependent experimental analysis of microwave transistors , 2001, IMTC 2001. Proceedings of the 18th IEEE Instrumentation and Measurement Technology Conference. Rediscovering Measurement in the Age of Informatics (Cat. No.01CH 37188).

[6]  J. Laskar,et al.  Thermal analysis of AlGaN-GaN power HFETs , 2003 .

[7]  Joy Laskar,et al.  Study of self-heating effects, temperature-dependent modeling, and pulsed load-pull measurements on GaN HEMTs , 2001 .

[8]  Lawrence Dunleavy,et al.  Temperature-dependent modeling of gallium arsenide MESFETs , 1996 .

[9]  Alina Caddemi,et al.  A robust and fast procedure for the determination of the small signal equivalent circuit of HEMTs , 2004, Microelectron. J..

[10]  Tetsuya Suemitsu,et al.  High-performance 0.1-/spl mu/m gate enhancement-mode InAlAs/InGaAs HEMT's using two-step recessed gate technology , 1999 .

[11]  J. Rodriguez-Tellez,et al.  Ambient temperature effects on DC behaviour of GaAs MESFET devices , 1993 .

[12]  S. E. Swirhun,et al.  Experimental investigation of the temperature dependence of GaAs FET equivalent circuits , 1992 .