Linear drain current degradations of FG-pLEDMOS transistor under different AC stress conditions

The linear drain current degradations of the Field Gate p-type Lateral Extended Drain MOS(FG-pLEDMOS)for different AC hot-carrier stress conditions have been experimentally investigated for the first time. It is noted that the hot-carrier degradation has closed relation with duty cycle and the degradation recovery phenomenon has been discovered in this novel device. The experimental results also show that the degradation strongly depends on the time of rising and falling edge of the gate signal pulse. The FG-pLEDMOS stressed at faster rising and falling edge will suffer from more serious hot-carrier degradation.