CMOS-on-SOI ESD protection networks

ESD robustness of 4 kV HBM is achieved in CMOS-on-SOI ESD protection networks in an advanced sub-0.25 /spl mu/m CMOS-on-SOI technology. Design layout, body contact, floating gate effects and novel ESD protection implementations are discussed.

[1]  B.T. Ahlport,et al.  C-MOS/SOS LSI input/Output protection networks , 1978, IEEE Transactions on Electron Devices.

[2]  G. Groeseneken,et al.  Double snapback in SOI nMOSFETs and its application for SOI ESD protection , 1993, IEEE Electron Device Letters.

[3]  Sung-Mo Kang,et al.  EOS/ESD protection circuit design for deep submicron SOI technology , 1995, Electrical Overstress/Electrostatic Discharge Symposium Proceedings.

[4]  Eric A. Vittoz,et al.  Low-power design: ways to approach the limits , 1994, Proceedings of IEEE International Solid-State Circuits Conference - ISSCC '94.

[5]  G. Groeseneken,et al.  Analysis of Snapback in Soi nMosfets and its Use for an Soi Esd Protection Circuit , 1992, 1992 IEEE International SOI Conference.

[6]  S.H. Cohen,et al.  An improved input protection circuit for C-MOS/SOS arrays , 1978, IEEE Transactions on Electron Devices.

[7]  S. S. Yuen,et al.  Comparison of ESD protection capability of SOI and bulk CMOS output buffers , 1994, Proceedings of 1994 IEEE International Reliability Physics Symposium.

[8]  Steven H. Voldman,et al.  Mixed-voltage interface ESD protection circuits for advanced microprocessors in shallow trench and LOCOS isolation CMOS technologies , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[9]  Jean-Pierre Colinge,et al.  Double Snapback in SO1 nMOSFET's and its Application for SO1 ESD Protection , 1993 .

[10]  Chenming Hu Low-voltage CMOS device scaling , 1994, Proceedings of IEEE International Solid-State Circuits Conference - ISSCC '94.

[11]  T.J. Oki,et al.  C-MOS/SOS gate-protection networks , 1978, IEEE Transactions on Electron Devices.

[12]  Yuan Taur,et al.  A half-micron CMOS logic generation , 1995, IBM J. Res. Dev..

[13]  Tak H. Ning,et al.  CMOS scaling in the 0.1-µm, 1.X-volt regime for high-performance applications , 1995, IBM Journal of Research and Development.

[14]  J. Colinge Silicon-on-Insulator Technology , 1991 .