18.8 A 192pW Hybrid Bandgap-Vth Reference with Process Dependence Compensated by a Dimension-Induced Side-Effect

A voltage reference circuit is an essential block of a system to generate various internal voltages. Since it consumes static power in standby modes, it plays an important role in energy management of battery-limited applications. The bandgap reference (BGR) has been a widely used approach since it provides a well-defined large value ($\sim 1.15\text{V}$) with strong immunity to process, supply and temperature changes. Recently proposed BGR approaches achieved a great reduction of power consumption by taking only complementary-to-absolute-temperature (CTAT) quantity from a PN junction while they obtained proportional-to-absolute-temperature (PTAT) quantity from alternative CMOS circuits such as a CTAT divider [1]or leakage-based two diodes [2, 3]. However, these BGR schemes are formed with multiple branches fed from a supply voltage above 1.4V and require power consumption of order larger than 10nW. To further reduce power consumption, threshold-based reference approaches with CMOS-only circuits have been proposed [4, 5]. However, generation of a practical voltage level by up-scaling of a threshold-based reference also causes an amplification of the uncertainty by the same factor. I addition, though [4]has successfully achieved sub-nW power consumption, the threshold voltage eventually suffers from a large sensitivity to process variation because the threshold voltage is affected by process and design parameters. To reduce the effect of process variation, [5]proposed a PMOS-only circuit. However, it requires a different body biasing for a threshold difference that is needed to generate a non-zero reference.