Dislocations in 4 H ‐ SiC Substrates and Epilayers
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[1] G. Dunne,et al. Characterization of 4H-SiC Monocrystals Grown by PhysicalVapor Transport , 2017 .
[2] G. Chung,et al. Prismatic Slip in PVT-Grown 4H-SiC Crystals , 2017, Journal of Electronic Materials.
[3] Jie Zhang,et al. Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer , 2014 .
[4] M. Loboda,et al. The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC , 2013 .
[5] M. Loboda,et al. Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC , 2012 .
[6] M. Loboda,et al. Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC , 2012 .
[7] Balaji Raghothamachar,et al. Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+a during the physical vapor transport growth of 4H–SiC , 2011 .
[8] M. Loboda,et al. Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a , 2011 .
[9] M. Dudley,et al. Nucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-Epitaxy , 2010 .
[10] Yi Chen,et al. Nucleation mechanism of dislocation half-loop arrays in 4H-silicon carbide homoepitaxial layers , 2009 .
[11] H. Tsuchida,et al. Investigation of character and spatial distribution of threading edge dislocations in 4H-SiC epilayers by high-resolution topography , 2009 .
[12] Yi Chen,et al. Observations of the influence of threading dislocations on the recombination enhanced partial dislocation glide in 4H-silicon carbide epitaxial layers , 2007 .
[13] Yi Chen,et al. Epitaxial growth and characterization of silicon carbide films , 2006 .
[14] T. Sudarshan,et al. Basal plane dislocation-free epitaxy of silicon carbide , 2005 .
[15] Jan Linnros,et al. Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias , 2002 .
[16] H. Lendenmann,et al. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes , 2001 .
[17] M. Dudley,et al. Characterization of SiC using Synchrotron White Beam X-ray Topography , 2000 .
[18] E. Janzén,et al. Current status and advances in the growth of SiC , 2000 .
[19] A. Lebedev,et al. Wide-gap semiconductors for high-power electronics , 1999 .
[20] D. Hofmann,et al. Prospects of the use of liquid phase techniques for the growth of bulk silicon carbide crystals , 1999 .
[21] Michael Dudley,et al. Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (<250 V) 4H-SiC p/sup +/-n junction diodes. I. DC properties , 1999 .
[22] G. Pensl,et al. Near-equilibrium growth of micropipe-free 6H-SiC single crystals by physical vapor transport , 1998 .
[23] R. Glass,et al. SiC Seeded Boule Growth , 1997 .
[24] Michael Dudley,et al. Experimental Studies of Hollow-Core Screw Dislocations in 6H-SiC and 4H-SiC Single Crystals , 1997 .
[25] M. Skowronski,et al. An atomic force microscopy study of super-dislocation/micropipe complexes on the 6H-SiC(0 0 0 1) growth surface , 1997 .
[26] Tsunenobu Kimoto,et al. Step-controlled epitaxial growth of SiC: High quality homoepitaxy , 1997 .
[27] A. Ellison,et al. High quality 4H-SiC grown on various substrate orientations , 1997 .
[28] D. J. Larkin. An Overview of SiC Epitaxial Growth , 1997 .
[29] A. Ellison,et al. High temperature chemical vapor deposition of SiC , 1996 .
[30] J. A. Powell,et al. White-beam synchrotron topographic analysis of multi-polytype SiC device configurations , 1995 .
[31] P. Neudeck,et al. Performance limiting micropipe defects in silicon carbide wafers , 1994, IEEE Electron Device Letters.
[32] H. Matsunami. Progress in epitaxial growth of SiC , 1993 .
[33] H. Sumi,et al. Dynamic defect reactions induced by multiphonon nonradiative recombination of injected carriers at deep levels in semiconductors , 1984 .
[34] V. Tsvetkov,et al. Investigation of growth processes of ingots of silicon carbide single crystals , 1978 .
[35] A. Authier,et al. Variation of stacking fault contrast with the value of the phase shift in X-ray topography , 1977 .
[36] J. Weeks,et al. Theory of recombination-enhanced defect reactions in semiconductors , 1975 .
[37] Balaji Raghothamachar,et al. X-Ray Topography Techniques for Defect Characterization of Crystals , 2010 .
[38] V. D. Heydemann,et al. THE STRUCTURAL EVOLUTION OF LELY SEEDS DURING THE INITIAL STAGES OF SiC SUBLIMATION GROWTH , 1997 .