论文信息 - High-performance EEPROMs using N- and P-channel polysilicon thin-film transistors with electron cyclotron resonance N 2 O-plasma oxide

High-performance EEPROMs using N- and P-channel polysilicon thin-film transistors with electron cyclotron resonance N 2 O-plasma oxide

High-performance EEPROMs using n- and p-channel polysilicon thin-film transistors (poly-Si TFTs) with electron cyclotron resonance (ECR) N/sub 2/O-plasma oxide have been demonstrated. Both programming and erasing were accomplished by Fowler-Nordheim (F-N) tunneling within 1 ms regardless of programming and erasing voltages. The poly-Si TFT EEPROMs have a threshold voltage shift of 4 V between programmed and erased states; furthermore, they maintain a large threshold voltage shift of 2.5 V after 1/spl times/10/sup 5/ program and erase cycles. This is attributed to the excellent charge-to-breakdown (Qbd) up to 10 C/cm/sup 2/ of ECR N/sub 2/O-plasma oxide.

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