论文信息 - Modeling MESFETs for intermodulation analysis of resistive FET mixers

Modeling MESFETs for intermodulation analysis of resistive FET mixers

This paper describes a new method for calculating intermodulation distortion in resistive FET mixers. By utilizing an expression for the I/V characteristics of the MESFET device whose parameters are fitted to the static I/V and its derivatives, this model accurately predicts distortion and is the first of its kind to be shown valid for resistive FET mixers.<<ETX>>

S.A. Maas | R.S. Virk

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