Breakdown in silicon oxide−A review

A review is given concerning measurement techniques and experimental results obtained on electrical breakdown in SiO2. Breakdown dependence on parameters such as time, thickness, temperature, and electrode material are covered, as well as the effect of various high‐temperature processing steps and the effect of ion implantation. The effects of sodium in causing time‐dependent breakdown are also reviewed. Special attention is given to the intrinsic breakdown mechanism in MOS capacitors where mechanisms involving impact ionization and positive charge buildup in the insulator are favored.