p‐type InGaAs/InP quantum well infrared photodetector with peak response at 4.55 μm

Lattice‐matched InGaAs/InP quantum well intersubband photodetectors (QWIPs) have been grown on an InP substrate by gas source molecular beam epitaxy. Detection at 4.55 μm was observed for a narrow well p‐type InGaAs QWIP which, when complimented by a high responsivity 8.93 μm n‐type InGaAs/InP QWIP, demonstrates the possibility of dual band, monolithically integrated QWIPs on the same InP substrate. Theoretical calculations of the photocurrent spectra are in excellent agreement with the experimental data.