Mechanism of the subband excitation of photoluminescence from erbium ions in silicon under high-intensity optical pumping
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[1] I. Yassievich. Non-resonant excitation of rare-earth ions via virtual Auger process , 2011 .
[2] V. P. Kuznetsov,et al. Specific features of the mechanisms of excitation of erbium photoluminescence in epitaxial Si:Er/Si structures , 2010 .
[3] T. Gregorkiewicz,et al. Donor-state-enabling Er-related luminescence in silicon: direct identification and resonant excitation. , 2007, Physical review letters.
[4] Anthony J. Kenyon,et al. Erbium in silicon , 2005 .
[5] V. P. Kuznetsov,et al. Photoluminescence excitation spectroscopy of erbium in epitaxially grown Si:Er structures , 2005 .
[6] V. P. Kuznetsov,et al. Special features of the sublimational molecular-beam epitaxy of Si and its potentialities for growing Si:Er/Si structures , 2000 .
[7] V. P. Kuznetsov,et al. Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy , 1999 .
[8] A. Polman,et al. Erbium implanted thin film photonic materials , 1997 .
[9] G. Davies,et al. The optical properties of luminescence centres in silicon , 1989 .
[10] G. Macfarlane,et al. FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI , 1957 .
[11] V. P. Kuznetsov,et al. Erbium photoluminescence excitation spectroscopy in Si: Er epitaxial structures , 2005 .
[12] V. P. Kuznetsov,et al. Er3+ photoluminescence excitation spectra in erbium-doped epitaxial silicon structures , 2004 .