Nuclear Radiation Degradation Study on HD Camera Based on CMOS Image Sensor at Different Dose Rates

In this work, we irradiated a high-definition (HD) industrial camera based on a commercial-off-the-shelf (COTS) CMOS image sensor (CIS) with Cobalt-60 gamma-rays. All components of the camera under test were fabricated without radiation hardening, except for the lens. The irradiation experiments of the HD camera under biased conditions were carried out at 1.0, 10.0, 20.0, 50.0 and 100.0 Gy/h. During the experiment, we found that the tested camera showed a remarkable degradation after irradiation and differed in the dose rates. With the increase of dose rate, the same target images become brighter. Under the same dose rate, the radiation effect in bright area is lower than that in dark area. Under different dose rates, the higher the dose rate is, the worse the radiation effect will be in both bright and dark areas. And the standard deviations of bright and dark areas become greater. Furthermore, through the progressive degradation analysis of the captured image, experimental results demonstrate that the attenuation of signal to noise ratio (SNR) versus radiation time is not obvious at the same dose rate, and the degradation is more and more serious with increasing dose rate. Additionally, the decrease rate of SNR at 20.0, 50.0 and 100.0 Gy/h is far greater than that at 1.0 and 10.0 Gy/h. Even so, we confirm that the HD industrial camera is still working at 10.0 Gy/h during the 8 h of measurements, with a moderate decrease of the SNR (5 dB). The work is valuable and can provide suggestion for camera users in the radiation field.

[1]  T. Holý,et al.  Performance of a pixel detector suited for slow neutrons , 2005 .

[2]  Ying Wang,et al.  A low power dissipation high-speed CMOS image sensor with column-parallel sigma-delta ADCs , 2015, Microelectron. J..

[3]  Pierre Magnan,et al.  Ionization versus displacement damage effects in proton irradiated CMOS sensors manufactured in deep submicron process , 2009 .

[4]  Jiangtao Xu,et al.  A fast correlated multiple sampling technique based on 12-bit SAR ADC with digital calibration for low-noise CMOS image sensor , 2017, Microelectron. J..

[5]  Shoji Kawahito,et al.  Noise Reduction Effect of Multiple-Sampling-Based Signal-Readout Circuits for Ultra-Low Noise CMOS Image Sensors , 2016, Sensors.

[6]  Hong-Cheng Huang,et al.  The Development of Sun-Tracking System Using Image Processing , 2013, Sensors.

[7]  Ying Wang,et al.  Total dose radiation effects of hybrid bulk/SOI CMOS active pixel with buried channel SOI source follower , 2014, Microelectron. J..

[8]  Jiangtao Xu,et al.  A Low Power Digital Accumulation Technique for Digital-Domain CMOS TDI Image Sensor , 2016, Sensors.

[9]  N. Kalyvas,et al.  Experimental measurement of a high resolution CMOS detector coupled to CsI scintillators under X-ray radiation , 2015 .

[10]  Zujun Wang,et al.  Degradation and annealing studies on gamma rays irradiated COTS PPD CISs at different dose rates , 2016 .

[11]  D. Passeri,et al.  Continuous measurement of radiation damage of standard CMOS imagers , 2011 .

[12]  Guo-Neng Lu,et al.  P-type BSI Image Sensor with Active Deep Trench Interface Passivation for Radiation-hardened Imaging Systems , 2016 .

[13]  Magnus Mager,et al.  A process modification for CMOS monolithic active pixel sensors for enhanced depletion, timing performance and radiation tolerance , 2017 .

[14]  J. J. Blostein,et al.  Particle detection and classification using commercial off the shelf CMOS image sensors , 2016 .