Analysis of Gate Delay Scaling in In0.7Ga0.3As-Channel High Electron Mobility Transistors
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Daehyun Kim | J. Alamo | T. Otsuji | S. Fukuda | T. Suemitsu
[1] Daehyun Kim,et al. 30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz , 2008, IEEE Electron Device Letters.
[2] Tetsuya Suemitsu,et al. InP HEMT Technology for High-Speed Logic and Communications , 2007, IEICE Trans. Electron..
[3] T. Suemitsu,et al. An intrinsic delay extraction method for Schottky gate field effect transistors , 2004, IEEE Electron Device Letters.
[4] Y. Yamashita,et al. Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz , 2002, IEEE Electron Device Letters.
[5] M. Hueschen,et al. Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETs , 1988 .
[6] J.C.M. Hwang,et al. Electron-beam fabrication of GaAs low-noise MESFET's using a new trilayer resist technique , 1985, IEEE Transactions on Electron Devices.
[7] Y. G. Chai,et al. Submicron GaAs microwave FET's with low parasitic gate and source resistances , 1983, IEEE Electron Device Letters.
[8] S. M. Sze,et al. Physics of semiconductor devices , 1969 .