Photoluminescence and optical studies of 4 MeV electron irradiated MOCVD grown GaN

[1]  Yong Gao,et al.  Microwave characteristics analysis of photosensitive material InP under weak optical irradiation , 2020 .

[2]  C. C. Bueno,et al.  Current response stability of a commercial PIN photodiode for low dose radiation processing applications , 2020 .

[3]  V. V. Milenin,et al.  Radiative recombination in III-V semiconductors compounds and their surface morphology transformations due to treatments in weak magnetic fields , 2019 .

[4]  Kang L. Wang,et al.  Room Temperature Bonding of GaN on Diamond Wafers by Using Mo/Au Nano-Layer for High-Power Semiconductor Devices , 2019, Scripta Materialia.

[5]  Hyoungsoon Lee,et al.  Fundamental limits for near-junction conduction cooling of high power GaN-on-diamond devices , 2019, Solid State Communications.

[6]  Lianshan Wang,et al.  Growth and characterization of amber light-emitting diodes with dual-wavelength InGaN/GaN multiple-quantum-well structures , 2019, Materials Research Express.

[7]  Liuan Li,et al.  Fast and slow interface traps in transparent NiO gated AlGaN/GaN heterostructure field-effect transistors , 2019, Applied Surface Science.

[8]  I. Khmyrova,et al.  Blue-green light-emitting diode with patterned electrode: Spectral analysis , 2019, Microelectronic Engineering.

[9]  Woosung Park,et al.  Attachable freezing-delayed surfaces for ultraviolet sensing using GaN photodetector at low temperature in air , 2019, Applied Surface Science.

[10]  Semi Oh,et al.  Enhanced performance of InGaN/GaN MQW LED with strain-relaxing Ga-doped ZnO transparent conducting layer. , 2019, Optics express.

[11]  Weiying Guo,et al.  Low-Dose Radiation Promotes the Proliferation and Migration of AGE-Treated Endothelial Progenitor Cells Derived from Bone Marrow via Activating SDF-1/CXCR4/ERK Signaling Pathway , 2019, Radiation Research.

[12]  M. Housaindokht,et al.  Effect of low dose gamma ray on the plasmonic behavior of gold nanoparticle , 2019, Radiation Physics and Chemistry.

[13]  P. Lytvyn,et al.  Modification of GaN thin film on sapphire substrate optical properties under weak magnetic fields , 2018, Materials Research Express.

[14]  T. Suga,et al.  Direct wafer bonding of GaN-SiC for high power GaN-on-SiC devices , 2018, Materialia.

[15]  A. Polyakov,et al.  Temperature Dependence of Low‐Energy Electron Beam Irradiation Effect on Optical Properties of MQW InGaN/GaN Structures , 2018 .

[16]  S. Pearton,et al.  Recombination properties of dislocations in GaN , 2018 .

[17]  L. Wang,et al.  Self-powered GaN ultraviolet photodetectors with p-NiO electrode grown by thermal oxidation , 2018 .

[18]  T. Sharma,et al.  Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors , 2018 .

[19]  Zhaojun Lin,et al.  Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors , 2018, Scientific Reports.

[20]  V. V. Milenin,et al.  Mechanisms and possibilities of defect reorganization in III–V compounds due to the non-thermal microwave radiation treatment , 2017 .

[21]  R. Gainutdinov,et al.  Magnetic memory effects in triglycine sulfate ferroelectric crystals , 2017 .

[22]  K. Kushida,et al.  Modification of the yellow luminescence in gamma-ray irradiated GaN bulk single crystal , 2017 .

[23]  Shuti Li,et al.  Doping Si, Mg and Ca into GaN based on plasma stimulated room-temperature diffusion , 2017 .

[24]  I. Khmyrova,et al.  Blue-green InGaN/GaN light-emitting diode with mesh-like top metal electrode , 2017 .

[25]  M. Matys,et al.  Mechanism of yellow luminescence in GaN at room temperature , 2017 .

[26]  E. Yakimov,et al.  Dislocation glide in GaN films grown by the lateral-overgrowth method induced by low-energy electron-beam irradiation , 2016, Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques.

[27]  O. B. Okhrimenko,et al.  Effect of microwave (24 GHz) radiation treatment on impurity photoluminescence of CdTe:Cl single crystals , 2016 .

[28]  M. Albrecht,et al.  Diffusion of oxygen in bulk GaN crystals at high temperature and at high pressure , 2016 .

[29]  L. Sang,et al.  P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas , 2016, Scientific Reports.

[30]  V. V. Milenin,et al.  Long-term transformation of GaN/Al2O3 defect subsystem induced by weak magnetic fields , 2014 .

[31]  K. Cheng,et al.  Semiempirical method of suppressing interference effects in photoluminescence spectra of GaN heterostructures , 2014 .

[32]  Stephen J. Pearton,et al.  Radiation effects in GaN materials and devices , 2013 .

[33]  A. El-Taher,et al.  Effect of γ-irradiation exposure on optical properties of chalcogenide glasses Se70S30−xSbx thin films , 2012 .

[34]  T. Yuan,et al.  Electrical and Optical Characterization of n-GaN by High Energy Electron Irradiation , 2012 .

[35]  Zhizhong Chen,et al.  Strain relaxation in InGaN/GaN micro-pillars evidenced by high resolution cathodoluminescence hyperspectral imaging , 2012 .

[36]  N. Klyui,et al.  Electroreflectance study of the effect of γ radiation on the optical properties of epitaxial GaN films , 2012 .

[37]  Tao Wang,et al.  Influence of strain relaxation on the optical properties of InGaN/GaN multiple quantum well nanorods , 2011 .

[38]  F. Enrichi,et al.  Photoluminescence and photoluminescence excitation studies in 80 MeV Ni ion irradiated MOCVD grown GaN , 2011 .

[39]  N. B. Smirnov,et al.  10 MeV electrons irradiation effects in variously doped n-GaN , 2011 .

[40]  E. Yakimov,et al.  Effect of low-energy electron irradiation on the cathodoluminescence of multiple quantum well (MQW) InGaN/GaN structures , 2011 .

[41]  R. Morgunov,et al.  Magnetoplasticity and magnetic memory in diamagnetic solids , 2009 .

[42]  A. Stronski,et al.  Optical properties of the Si-doped GaN/Al2O3 films , 2009 .

[43]  N. Klein,et al.  Mechanism of mobility increase of the two-dimensional electron gas in AlGaN∕GaN heterostructures under small dose gamma irradiation , 2008 .

[44]  Jürgen Christen,et al.  Fabry-Perot effects in InGaN∕GaN heterostructures on Si-substrate , 2007 .

[45]  Sejoon Lee,et al.  Effects of electron beam annealing on optical and structural properties of GaN nanorods grown by HVPE , 2006 .

[46]  H. Morkoç,et al.  Luminescence properties of defects in GaN , 2005 .

[47]  P. Manoravi,et al.  Optical study of GaN epilayer grown by metalorganic chemical vapor deposition and pulsed laser deposition , 2005 .

[48]  R. Morgunov.  Spin micromechanics in the physics of plasticity , 2004 .

[49]  Kunio Suzuki,et al.  Evidence of electron-stimulated self-diffusion in GaN crystals , 2003 .

[50]  V. Evstropov,et al.  Dependence of GaN photoluminescence on the excitation intensity , 2002 .

[51]  T. Ohshima,et al.  Effect of 3 MeV electron irradiation on the photoluminescence properties of Eu-doped GaN , 2002 .

[52]  J. Muth,et al.  Electron-beam-induced optical memory effects in GaN , 2002 .

[53]  B. Vaandrager,et al.  Isotope effects on the rate of electron-beam dissociation of Mg-H complexes in GaN , 2002 .

[54]  Y. Hayashi,et al.  Origin of yellow luminescence in n-GaN induced by high-energy 7 MeV electron irradiation , 2001 .

[55]  K. Kuriyama,et al.  A point defect complex related to the yellow luminescence in electron irradiated GaN , 2001 .

[56]  H. Ticha,et al.  Far Infrared Spectra and Bonding Arrangement in Some Ge–Sb–S Glasses , 2000 .

[57]  K. Leifer,et al.  Cathodoluminescence intensity and dislocation contrast evolutions under electron beam excitation in epitaxial GaN laterally overgrown on (0001) sapphire , 1999 .

[58]  K. Fleischer,et al.  Direct experimental evidence for the role of oxygen in the luminescent properties of GaN , 1999 .

[59]  Takashi Jimbo,et al.  Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method , 1997 .

[60]  E. Schubert,et al.  MICROCAVITY EFFECTS IN GAN EPITAXIAL FILMS AND IN AG/GAN/SAPPHIRE STRUCTURES , 1997 .

[61]  Ferdinand Scholz,et al.  Optical detection of magnetic resonance in electron-irradiated GaN , 1997 .

[62]  S. G. Bishop,et al.  Effect of e‐beam irradiation on a p‐n junction GaN light emitting diode , 1996 .

[63]  Toshio Ogino,et al.  Mechanism of Yellow Luminescence in GaN , 1980 .

[64]  A. Akl,et al.  Effect of Se addition on optical and electrical properties of chalcogenide CdSSe thin films , 2016 .

[65]  A. Majid,et al.  Effect of β-irradiation on photoluminescence of MOCVD grown GaN , 2009 .

[66]  J. Tauc,et al.  Amorphous and liquid semiconductors , 1974 .