Room Temperature Growth of Indium Tin Oxide Films By Ultraviolet-Assisted Pulsed Laser Deposition

The characteristics of indium tin oxide (ITO) films grown at room temperature on (100) Si and Corning glass substrates by an in situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique have been investigated. The most important parameter, which influenced the optical and electrical properties of the grown films, was the oxygen pressure. For oxygen pressure below 1 mtorr, films were metallic, with very low optical transmittance and rather high resistivity values. The resistivity value decreased when using higher oxygen pressures while the optical transmittance increased. The optimum oxygen pressure was found to be around 10 mtorr. For higher oxygen pressures, the optical transmittance was better but a rapid degradation of the electrical conductivity was noticed. X-ray photoelectron spectroscopy investigations showed that ITO films grown at 10 mtorr oxygen are fully oxidized. All of the grown films were amorphous regardless of the oxygen pressure used.

[1]  Yuka Yamada,et al.  Stoichiometric indium oxide thin films prepared by pulsed laser deposition in pure inert background gas , 2000 .

[2]  Sven Laux,et al.  Room-temperature deposition of indium tin oxide thin films with plasma ion-assisted evaporation , 1998 .

[3]  J. W. Gerlach,et al.  Photon and ion beam assisted deposition of titanium nitride , 1996 .

[4]  Andrew T. S. Wee,et al.  Investigation of annealing effects on indium tin oxide thin films by electron energy loss spectroscopy , 2000 .

[5]  Alberto Piqué,et al.  Electrical, optical, and structural properties of indium–tin–oxide thin films for organic light-emitting devices , 1999 .

[6]  C. Otis,et al.  Gas‐phase oxidation of copper during laser ablation of YBa2Cu3O7−δ in different oxidizing ambients , 1993 .

[7]  Se-Young Choi,et al.  Transparent conductive ITO thin films through the sol-gel process using metal salts , 1999 .

[8]  R. K. Singh,et al.  Low-temperature growth of epitaxial ZnO films on (001) sapphire by ultraviolet- assisted pulsed laser deposition , 1999 .

[9]  F. O. Adurodija,et al.  Highly conducting indium tin oxide (ITO) thin films deposited by pulsed laser ablation , 1999 .

[10]  Louis M. Leung,et al.  Surface preparation and characterization of indium tin oxide substrates for organic electroluminescent devices , 1999 .

[11]  Alberto Piqué,et al.  Indium tin oxide thin films for organic light-emitting devices , 1999 .

[12]  R. A. Cox,et al.  Evaluated kinetic and photochemical data for atmospheric chemistry: Volume III - gas phase reactions of inorganic halogens , 2006 .

[13]  Kazuhiko Seki,et al.  Dependence of indium–tin–oxide work function on surface cleaning method as studied by ultraviolet and x-ray photoemission spectroscopies , 2000 .

[14]  T. Katoh,et al.  Low-Resistivity Highly Transparent Indium-Tin-Oxide Thin Films Prepared at Room Temperature by Synchrotron Radiation Ablation. , 1999 .

[15]  Thin film deposition by reactive magnetron sputtering: On the influence of target oxidation and its effect on surface properties , 1997 .

[16]  C. Tang,et al.  Organic Electroluminescent Diodes , 1987 .

[17]  C. Flamini,et al.  Reactive pulsed laser ablation and deposition of thin indium tin oxide films for solid state compact sensors , 1999 .

[18]  R. Singh,et al.  In Situ Ultraviolet‐Assisted Pulsed Laser Deposition of Y 2 O 3 Thin Films , 1999 .