A 56–65 GHz high-power amplifier MMIC using 100 nm AlGaN/GaN dual-gate HEMTs
暂无分享,去创建一个
I. Kallfass | P. Bruckner | M. Seelmann-Eggebert | M. Mikulla | C. Haupt | R. Kiefer | R. Quay | D. Schwantusche
[1] Arnulf Leuther,et al. Development of a high transconductance GaN MMIC technology for millimeter wave applications , 2011 .
[2] A. Tessmann,et al. High-gain cascode MMICs in coplanar technology at W-band frequencies , 1998, IEEE Microwave and Guided Wave Letters.
[3] A. Kurdoghlian,et al. GaN HFET for W-band Power Applications , 2006, 2006 International Electron Devices Meeting.
[4] Adele E. Schmitz,et al. GaN MMICs for RF power applications in the 50 GHz to 110 GHz frequency range , 2008 .
[5] Toshiaki Matsui,et al. Development of High-Frequency GaN HFETs for Millimeter-Wave Applications , 2008, IEICE Trans. Electron..
[6] M. Schlechtweg,et al. A Systematic State–Space Approach to Large-Signal Transistor Modeling , 2007, IEEE Transactions on Microwave Theory and Techniques.
[7] A. Kurdoghlian,et al. GaN MMIC PAs for E-Band (71 GHz - 95 GHz) Radio , 2008, 2008 IEEE Compound Semiconductor Integrated Circuits Symposium.