A novel flash memory cell based on Tunneling Field Effect Transistor (TFET) is proposed and investigated in this paper. Based on the TFET structure, the proposed novel flash memory cell shows high programming efficiency, low power consumption, and good punch-through immunity. Unlike traditional NOR Flash cell which adopts the channel hot carrier (CHE) injection near drain side for programming operation, the TFET flash memory cell utilizes hot electrons injection introduced by band-to-band tunneling near source side for programming, which can achieve 3 orders higher programming efficiency due to greatly alleviated competition between the vertical electric field and lateral electric field. Moreover, the programming leakage current is 2 orders lower due to the high punch-through immunity for TFET structure. The obtained results and theoretical analysis demonstrate that the newly proposed flash cell can be a potential candidate for low power, and high density NOR-type flash applications.