Two-dimensional nonisothermal carrier flow in a transistor structure under reactive circuit conditions

The current density and temperature distribution in a bipolar power transistor operating in the switching mode under transient conditions is computed as a function of circuit environment. The method of computation is to solve numerically the electrical carrier flow as well as Poisson and the heat flow equations in a two-dimensional model of an n+-p-n-n-transistor structure, as a function of time. Of particular interest is the behavior of the local current and temperature distribution achieved in the transistor during turn-off in a circuit with a large inductance. The length of time that the transistor remains in the high current, high voltage mode during the turn-off transient determines the extent of current crowding and local heating in the device.

[1]  P. L. Hower,et al.  Avalanche injection and second breakdown in transistors , 1970 .

[2]  J. Slotboom,et al.  Computer-aided two-dimensional analysis of bipolar transistors , 1973 .

[3]  H. Guckel,et al.  Negative resistance and filamentary currents in avalanching silicon p + -i-n + junctions , 1968 .

[4]  H. B. Grutchfield,et al.  Current mode second breakdown in epitaxial planar transistors , 1966 .

[5]  H. C. Josephs,et al.  Analysis of second breakdown in transistors using a simple model , 1966 .

[6]  H. A. Schafft,et al.  Second breakdown—A comprehensive review , 1967 .

[7]  H. H. Heimeier.  A two-dimensional numerical analysis of a silicon N-P-N transistor , 1973 .

[8]  Hans-Martin Rein.  Calculation of the breakdown characteristics of bipolar transistors using a two-dimensional model , 1976 .

[9]  H.C. Lin,et al.  Transient operation of transistor with inductive load , 1960, IRE Transactions on Electron Devices.

[10]  H. C. Poon,et al.  Modeling of avalanche effect in integral charge control model , 1972 .

[11]  W. Engl,et al.  Two-dimensional computer simulation for switching a bipolar transistor out of saturation , 1975, IEEE Transactions on Electron Devices.

[12]  Surinder Krishna,et al.  Second Breakdown in Power Transistors Due to Avalanche Injection , 1976, IEEE Transactions on Industrial Electronics and Control Instrumentation.

[13]  D.H. Navon,et al.  Time-dependent carrier flow in a transistor structure under nonisothermal conditions , 1977, IEEE Transactions on Electron Devices.

[14]  D.H. Navon,et al.  Two-dimensional carrier flow in a transistor structure under nonisothermal conditions , 1976, IEEE Transactions on Electron Devices.

[15]  S. Gaur,et al.  Transistor design and thermal stability , 1973 .

[16]  W. L. Engl,et al.  High injection in a two-dimensional transistor , 1974 .

[17]  P. L. Hower,et al.  Second breakdown of transistors during inductive turnoff , 1973 .

[18]  S. Gaur.  Avalanche-multiplication-region operation of n--p--n - --n + power transistors , 1976 .