Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
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Jizhou Kong | Di Wu | Aihong Li | Lai-Guo Wang | Wei Zhang | Lin Zhu | Xin Li | Yanqiang Cao | Zhengyi Cao