Failure mechanisms of AlGaAs/InGaAs pseudomorphic hemt's: Effects due to hot electrons and modulation of trapped charge

[1]  Gaudenzio Meneghesso,et al.  INTRODUCTORY INVITED PAPERFailure mechanisms due to metallurgical interactions in commercially available AlGaAs/GaAs and AlGaAs/InGaAs HEMTs , 1998 .

[2]  A. Paccagnella,et al.  Study of Low-Temperature Degradation of AlGaAs/InGaAs Pseudomorphic HEMT's , 1995, ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference.

[3]  M. Kuzuhara,et al.  Improved model for kink effect in AlGaAs/InGaAs heterojunction FET's , 1994 .

[4]  D. Yamauchi,et al.  A high efficiency V-band monolithic HEMT power amplifier , 1994, IEEE Microwave and Guided Wave Letters.

[5]  P. Chao,et al.  HEMT degradation in hydrogen gas , 1994, IEEE Electron Device Letters.

[6]  D. Day,et al.  Metastable impact ionization of traps model for lock‐on in GaAs photoconductive switches , 1993 .

[7]  C. Canali,et al.  Impact ionization and light emission in high-power pseudomorphic AlGaAs/InGaAs HEMTs , 1993 .

[8]  H. Morkner,et al.  A high performance 1.5 dB low noise GaAss PHEMT MMIC amplifier for low cost 1.5-8 GHz commercial applications , 1993, IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers.

[9]  L. Escotte,et al.  Noise in AlGaAs/InGaAs/GaAs pseudomorphic HEMTs from 10 Hz to 18 GHz , 1993 .

[10]  Michael S. Shur,et al.  Breakdown walkout in AlAs/GaAs HEMTs , 1992 .

[11]  S. Mottet,et al.  Stability of interfaces in pseudomorphic ingaas hemts , 1992 .

[12]  L. G. Hipwood,et al.  The long‐term stability of n‐AlGaAs/InGaAs/GaAs pseudomorphic HEMTs , 1991 .

[13]  A. Christou,et al.  Reliability of InGaAs HEMTs on GaAs substrates , 1991, 29th Annual Proceedings Reliability Physics 1991.

[14]  Alessandro Paccagnella,et al.  Trap-related effects in AlGaAs/GaAs HEMTs , 1991 .

[15]  C.S. Chang,et al.  An analytical two-dimensional simulation for the GaAs MESFET drain-induced barrier lowering: a short-channel effect , 1990 .

[16]  P. Ladbrooke,et al.  Low-field low-frequency dispersion of transconductance in GaAs MESFETs with implications for other rate-dependent anomalies , 1988 .

[17]  Kwyro Lee,et al.  A new technique for characterization of the "End" resistance in modulation-doped FET's , 1984, IEEE Transactions on Electron Devices.