Theoretical And Experimental Studies Of The Effects Of Rapid Thermal Annealing In GaAs/AlGaAs Quantum Dots Grown By Droplet Epitaxy

We fabricated low‐density GaAs/AlGaAs quantum dots for single photon source by droplet epitaxy. We investigated the emission energies of the dots and underlying superlattice by using photoluminescence and cathodoluminescence measurements. By forming a mesa etched structure, we distinguished the transitions from the superlattice and the dots. And we calculated the diffusion length in this system from the peak shift of the superlattice, and applied the diffusion to the dots to investigate the emission energy shift of the QDs.z