Interface recombination velocity at the Si/SiO2 interface determined from bias-dependent photoluminescence

The photoluminescence field effect is used to study the recombination at the Si/SiO2 interface. Experiments and theoretical considerations show that the field-induced quenching of the photoluminescence intensity is due to increasing interface recombination velocity. The influence of a “dead” depletion layer free of recombination radiation on the photoluminescence intensity is found to be negligible. This fact enables one to determine quantitatively the interface recombination velocity from the normalized photoluminescence intensity. The determination of interface state parameters is discussed. Der Photolumineszenzfeldeffekt wird benutzt, um die Rekombination an der Si/SiO2-Grenzflache zu untersuchen. Die Experimente und theoretischen Untersuchungen lassen den Schlus zu, das die feldinduzierte Abnahme der Photolumineszenzintensitat durch eine erhohte Grenzflachenrekombinationsgeschwindigkeit verursacht wird. Der Einflus einer „toten” Verarmungsrandschicht ohne Strahlungsemission auf die Photolumineszenzintensitat ist hierbei vernachlassigbar. Diese Tatsache erlaubt eine quantitative Bestimmung der Grenzflachenrekombinationsgeschwindigkeit aus der normierten Photolumineszenzintensitat. Die Moglichkeit der Bestimmung von Parametern der Grenzflachenzustande wird diskutiert.

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