Mobility-dependent low-frequency noise in graphene field-effect transistors.

We have investigated the low-frequency 1/f noise of both suspended and on-substrate graphene field-effect transistors and its dependence on gate voltage, in the temperature range between 300 and 30 K. We have found that the noise amplitude away from the Dirac point can be described by a generalized Hooge's relation in which the Hooge parameter α(H) is not constant but decreases monotonically with the device's mobility, with a universal dependence that is sample and temperature independent. The value of α(H) is also affected by the dynamics of disorder, which is not reflected in the DC transport characteristics and varies with sample and temperature. We attribute the diverse behavior of gate voltage dependence of the noise amplitude to the relative contributions from various scattering mechanisms, and to potential fluctuations near the Dirac point caused by charge carrier inhomogeneity. The higher carrier mobility of suspended graphene devices accounts for values of 1/f noise significantly lower than those observed in on-substrate graphene devices and most traditional electronic materials.

[1]  C. Dimitrakopoulos,et al.  Wafer-Scale Graphene Integrated Circuit , 2011, Science.

[2]  M. Shur,et al.  LOW-FREQUENCY ELECTRONIC NOISE IN GRAPHENE TRANSISTORS: COMPARISON WITH CARBON NANOTUBES , 2011 .

[3]  M. Shur,et al.  Observation of the memory steps in graphene at elevated temperatures , 2011, 1101.3605.

[4]  M. Shur,et al.  Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms , 2010, 2011 21st International Conference on Noise and Fluctuations.

[5]  S. Sarma,et al.  Electronic transport in two-dimensional graphene , 2010, 1003.4731.

[6]  Kang L. Wang,et al.  Effect of spatial charge inhomogeneity on 1/f noise behavior in graphene. , 2010, Nano letters.

[7]  Cees Dekker,et al.  Charge noise in graphene transistors. , 2010, Nano letters.

[8]  Qiang Li,et al.  Suspended graphene sensors with improved signal and reduced noise. , 2010, Nano letters.

[9]  Thomas Szkopek,et al.  Low-frequency noise and hysteresis in graphene field-effect transistors on oxide S.A. , 2010 .

[10]  P. Kim,et al.  Observation of the fractional quantum Hall effect in graphene , 2009, Nature.

[11]  Arindam Ghosh,et al.  Ultralow noise field-effect transistor from multilayer graphene , 2009, 0905.4485.

[12]  Dong Yan,et al.  Flicker Noise in Bilayer Graphene Transistors , 2008, IEEE Electron Device Letters.

[13]  K. Jenkins,et al.  Operation of graphene transistors at gigahertz frequencies. , 2008, Nano letters.

[14]  Priscilla Kailian Ang,et al.  Solution-gated epitaxial graphene as pH sensor. , 2008, Journal of the American Chemical Society.

[15]  Xu Du,et al.  Approaching ballistic transport in suspended graphene. , 2008, Nature nanotechnology.

[16]  G. Fudenberg,et al.  Ultrahigh electron mobility in suspended graphene , 2008, 0802.2389.

[17]  P. Avouris,et al.  Strong suppression of electrical noise in bilayer graphene nanodevices. , 2008, Nano letters.

[18]  K. Novoselov,et al.  Giant intrinsic carrier mobilities in graphene and its bilayer. , 2007, Physical review letters.

[19]  K. Klitzing,et al.  Observation of electron–hole puddles in graphene using a scanning single-electron transistor , 2007, 0705.2180.

[20]  S. Sarma,et al.  A self-consistent theory for graphene transport , 2007, Proceedings of the National Academy of Sciences.

[21]  K. Novoselov,et al.  Detection of individual gas molecules adsorbed on graphene. , 2006, Nature materials.

[22]  S. Sarma,et al.  Carrier transport in two-dimensional graphene layers. , 2006, Physical review letters.

[23]  K. Nomura,et al.  Quantum Hall ferromagnetism in graphene. , 2006, Physical review letters.

[24]  P. Kim,et al.  Experimental observation of the quantum Hall effect and Berry's phase in graphene , 2005, Nature.

[25]  Andre K. Geim,et al.  Electric Field Effect in Atomically Thin Carbon Films , 2004, Science.

[26]  F. Hooge 1/f noise sources , 1994 .

[27]  Z. Çelik-Butler,et al.  Spatial correlation measurements of 1ƒ noise in semiconductors , 1988 .

[28]  M. Weissman,et al.  1 f noise in metal films lacks spatial correlation , 1981 .

[29]  L.K.J. Vandamme,et al.  Experimental studies on 1/f noise , 1981 .

[30]  F. Hooge 1/ƒ noise is no surface effect , 1969 .