Transport equations in heavy doped silicon
暂无分享,去创建一个
[1] R. Mertens,et al. Measurement of the carrier lifetime by an impedance technique , 1971 .
[2] F. Lindholm,et al. Impurity concentration dependent density of states and resulting fermi level for silicon , 1971 .
[3] R. V. Overstraeten,et al. Analytical Expressions for Electric Field and for Capacitances of Symmetrical and Asymmetrical Abrupt p‐n Junctions , 1971 .
[4] Comparison of theoretical and experimental values of the capacitance of diffused junctions , 1972 .
[5] Y. Chang. Capacitance of p‐n Junctions: Space‐Charge Capacitance , 1966 .
[6] H. D. Man,et al. The influence of heavy doping on the emitter efficiency of a bipolar transistor , 1971 .
[7] E. Kane,et al. Thomas-Fermi Approach to Impure Semiconductor Band Structure , 1963 .
[8] Basant R. Chawla,et al. Transition region capacitance of diffused p-n junctions , 1971 .