p-type ZnTe:Ga nanowires: controlled doping and optoelectronic device application

Although significant progress has been achieved in the synthesis and doping of ZnTe nanostructures, it remains a major challenge to rationally tune their transport properties for nanodevice applications. In this work, p-type ZnTe nanowires (NWs) with tunable conductivity were synthesized by employing Ga/Ga2O3 as a dopant via a simple thermal evaporation method. Electrical measurements of back-gate metal-oxide field-effect-transistors based on a single NW revealed that when the Ga content in the ZnTe NWs increases from 1.3 to 5.1 and 8.7%, the hole mobility and hole concentration will increase from 0.0069 to 0.33 to 0.46 cm2 V−1 s−1, respectively. It was also found that the photodetector composed of a ZnTe:Ga NW/graphene Schottky diode exhibited high sensitivity to visible light illumination with an on/off ratio as high as 102 at reverse bias, with good reproducibility. The responsivity and detectivity were estimated to be 4.17 × 103 A W−1 and 3.19 × 1013 cm Hz1/2 W−1, higher than other ZnTe nanostructure based photodetectors. It is expected that the ZnTe:Ga NWs with controlled p-type conductivity are promising building blocks for fabricating high performance nano-optoelectronic devices in the future.

[1]  Hongwei Zhu,et al.  Graphene-CdSe nanobelt solar cells with tunable configurations , 2011 .

[2]  Lifeng Wang,et al.  Synthesis of few-layer GaSe nanosheets for high performance photodetectors. , 2012, ACS nano.

[3]  W. Neumann,et al.  Catalytic growth of ZnTe nanowires by molecular beam epitaxy: structural studies , 2007 .

[4]  J. Wu,et al.  Self-powered pendulum and micro-force active sensors based on a ZnS nanogenerator , 2014 .

[5]  C. Ha,et al.  Fabrication and characterization of nano-structured ZnS thin films as the buffer layers in solar cells , 2014 .

[6]  Shui-Tong Lee,et al.  One-dimensional II–VI nanostructures: Synthesis, properties and optoelectronic applications , 2010 .

[7]  G. Qin,et al.  High-performance CdSe nanobelt based MESFETs and their application in photodetection , 2012 .

[8]  A. Rakhshani,et al.  Nitrogen doping of ZnTe for the preparation of ZnTe/ZnO light-emitting diode , 2013, Journal of Materials Science.

[9]  J. Salfi,et al.  Room temperature single nanowire ZnTe photoconductors grown by metal-organic chemical vapor deposition , 2010 .

[10]  Chao Xie,et al.  High-performance nonvolatile Al/AlOx/CdTe:Sb nanowire memory device , 2013, Nanotechnology.

[11]  Xiaoxu Wang,et al.  Visual monitoring of laser power and spot profile in micron region by a single chip of Zn-doped CdS nanobelts , 2014 .

[12]  B. Ullrich,et al.  Optoelectronic properties of ZnTe/Si heterostructures formed by nanosecond laser deposition at different Nd:YAG laser lines , 2007 .

[13]  H. Yang,et al.  Dual wavelength electroluminescence from CdSe/CdS tetrapods. , 2014, ACS nano.

[14]  T. Xu,et al.  Simple metal/SiO2/Si planar photodetector utilizing leakage current flows through a SiO2 layer , 2014 .

[15]  Yang Jiang,et al.  High-gain visible-blind UV photodetectors based on chlorine-doped n-type ZnS nanoribbons with tunable optoelectronic properties , 2011 .

[16]  Yang Jiang,et al.  Enhanced p-Type Conductivity of ZnTe Nanoribbons by Nitrogen Doping , 2010 .

[17]  X. Zhang,et al.  Broadband detection capability of ZnTe electro-optic field detectors , 1996 .

[18]  J. Jie,et al.  p-CdTe nanoribbon/n-silicon nanowires array heterojunctions: photovoltaic devices and zero-power photodetectors , 2012 .

[19]  L. Luo,et al.  The effect of plasmonic nanoparticles on the optoelectronic characteristics of CdTe nanowires. , 2014, Small.

[20]  J. Beeman,et al.  Demonstration of homojunction ZnTe solar cells , 2010 .

[21]  C. Soci,et al.  ZnO nanowire UV photodetectors with high internal gain. , 2007, Nano letters.

[22]  Chao Xie,et al.  Monolayer graphene film on ZnO nanorod array for high-performance Schottky junction ultraviolet photodetectors. , 2013, Small.

[23]  S. Rhee,et al.  Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices , 2009 .

[24]  A. Alivisatos,et al.  Improved efficiencies in light emitting diodes made with CdSe(CdS) core/shell type nanocrystals and a semiconducting polymer , 1997 .

[25]  J. Jie,et al.  Fabrication of p-type ZnSe:Sb nanowires for high-performance ultraviolet light photodetector application , 2013, Nanotechnology.

[26]  Lide Zhang,et al.  Fabrication and characterization of single-crystalline ZnTe nanowire arrays. , 2005, The journal of physical chemistry. B.

[27]  Jun Zhang,et al.  Exciton-phonon coupling in individual ZnTe nanorods studied by resonant Raman spectroscopy , 2012 .

[28]  L. Luo,et al.  Ultrahigh Mobility of p‐Type CdS Nanowires: Surface Charge Transfer Doping and Photovoltaic Devices , 2013 .

[29]  L. Luo,et al.  p-type ZnS:N nanowires: Low-temperature solvothermal doping and optoelectronic properties , 2013 .

[30]  Yugang Zhang,et al.  Construction of crossed heterojunctions from p-ZnTe and n-CdSe nanoribbons and their photoresponse properties , 2014 .

[31]  Yugang Zhang,et al.  Self-powered and fast-speed photodetectors based on CdS:Ga nanoribbon/Au Schottky diodes , 2012 .

[32]  A. Meijerink,et al.  Growth and stability of ZnTe magic-size nanocrystals. , 2011, Small.

[33]  Ren-Min Ma,et al.  High-performance logic circuits constructed on single CdS nanowires. , 2007, Nano letters.

[34]  B. Ullrich,et al.  Absorption and photoconductivity properties of ZnTe thin films formed by pulsed-laser deposition on glass , 2005 .

[35]  R. Ma,et al.  Electrical properties of Cu doped p-ZnTe nanowires , 2006 .