Electronic and mechanical properties of monocrystalline silicon doped with trace content of N or P: A first-principles study
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W. J. Zhang | Yuandong Wu | Pei-lei Zhang | Jieshi Chen | Shaowei Li | S. Li | Huichao Lu | Y. Wu | Z.S. Yu | Y. Chun | Z. Yue | J.S. Chen | H. Lu | Zhishui Yu | P. Zhang | W.J. Zhang | Z. Yu | Z. Yue