Full temperature single event upset characterization of two microprocessor technologies
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[1] B. L. Bhuva,et al. Single Event Upset Dependence on Temperature or an NMOS/Resistive-Load Static RAM , 1986, IEEE Transactions on Nuclear Science.
[2] Donald K. Nichols,et al. A Summary of JPL Single Event Upset Test Data from May 1982, Through January 1984 , 1984, IEEE Transactions on Nuclear Science.
[3] R. Koga,et al. The Effect of Elevated Temperature on Latchup and Bit Errors in CMOS Devices , 1986, IEEE Transactions on Nuclear Science.
[4] D. K. Nichols,et al. IEEE Transactions on Nuclear Science, Vol. NS-34, No. 6, December 1987 Temperature and Epi Thickness Dependence of the Heavy Ion Induced Latchup Threshold for a CMOS/EPI 16K Static RAM , 2007 .