论文信息 - Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates - 字舞流文

Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates

J. Massies | Y. Cordier | M. Hugues | F. Semond | É. Frayssinet | B. Beaumont | P. Gibart | Z. Bougrioua | P. Lorenzini | F. Natali | J. Faurie