Coupled bipolar transistors as very robust ESD protection devices for automotive applications

ESD requirements for automotive applications are demanding and diverse. Coupled bipolar ESD protection devices within a BCD technology are realized having a system level HBM-gun (330 Omega/150 pF) robustness of more than 10 kV with the thyristor mode being avoided. The change from rectangular to circular device geometry leads to an increase in device robustness with respect to device level HBM tests and long time current pulses.