论文信息 - A comparison between Si and GaAs nanowire-based photovoltaic devices

A comparison between Si and GaAs nanowire-based photovoltaic devices

A comparison between Silicon (Si) which is an indirect band-gap semiconductor and Gallium Arsenide (GaAs) as a direct band-gap semiconductor for vertical-aligned nanowire radial pn junction-based photovoltaic (PV) devices is presented. The study takes place through determining the fill factor, the power conversion efficiency, the optimum device length and the spectrum of the quantum efficiency. The sensitivity of both Si and GaAs nanowire to temperature variations is also investigated. Finally, the array effect for nanowires of each material alone then of arrays of mixed elements' types is simulated. The results are found to be in accordance with the available experimental measurements.

[1] Antonio Luque,et al. Handbook of photovoltaic science and engineering , 2011 .

[2] Jacques I. Pankove,et al. Optical Processes in Semiconductors , 1971 .

[3] Joshua M. Spurgeon,et al. Radial PN junction, wire array solar cells , 2008, 2008 33rd IEEE Photovoltaic Specialists Conference.

[4] V. Schlosser. Limiting factors for the application of crystalline upgraded metallurgical grade silicon , 1984, IEEE Transactions on Electron Devices.

[5] Nathan S. Lewis,et al. Comparison of the device physics principles of planar and radial p-n junction nanorod solar cells , 2005 .

[6] M. Green,et al. Novel parallel multijunction solar cell , 1994 .

[7] H. Queisser,et al. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells , 1961 .

[8] P. Werner,et al. Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate , 2009, Nanoscale research letters.

[9] Nathan S Lewis,et al. Photovoltaic measurements in single-nanowire silicon solar cells. , 2008, Nano letters.

[10] N. Lewis,et al. Radial pn junction nanorod solar cells: device physics principles and routes to fabrication in silicon , 2005, Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005..