A novel deposit/spin waveguide interconnection (DSWI) for semiconductor integrated optics

We propose an efficient and simple optical interconnection between active semiconductor components by deposition and spin coating. Details of the waveguide design, the fabrication technique, and a promising material combination are given. Experimental results with an integrated laser-polyimide/SiO x ( x \sim 2 ) waveguide combination demonstrate low-threshold (2.0 kA/cm2) laser operation and a low-loss waveguide interconnection (81 percent coupling efficiency) on a GaInAsP/InP chip.

[1]  L. Coldren,et al.  Crystallographic facets chemically etched in GaInAsP/InP for integrated optics , 1981 .

[2]  C. M. Wolfe,et al.  Integrated GaAs‐AlGaAs double‐heterostructure lasers , 1975 .

[3]  J. Campbell,et al.  Monolithic laser/waveguide coupling by evanescent fields , 1977, IEEE Journal of Quantum Electronics.

[4]  Shyh Wang,et al.  Large‐optical‐cavity GaAs‐ (GaAl)As injection laser with low‐loss distributed Bragg reflectors , 1977 .

[5]  P. Wright,et al.  InGaAsP double heterostructure lasers (λ=1.3 μm) with etched reflectors , 1980 .

[6]  L. Rothman Properties of Thin Polyimide Films , 1980 .

[7]  P. Tien,et al.  Formation of light-guiding interconnections in an integrated optical circuit by composite tapered-film coupling. , 1973, Applied optics.

[8]  Katsuyuki Utaka,et al.  GaInAsP/InP Integrated Twin-Guide Lasers with First-Order Distributed Bragg Reflectors at 1.3 µm Wavelength , 1980 .

[9]  Kenichi Iga,et al.  GaInAsP/InP laser with monolithically integrated monitoring detector , 1980 .

[10]  Yasuharu Suematsu,et al.  Chasi-Guided Modes and Related Radiation Losses in Optical Dielectric Waveguides with External Higher Index Surroundings , 1975 .

[11]  L. Coldren,et al.  Refractive index data from GaxIn1-xAsyP1-y films , 1981 .

[12]  R. A. Logan,et al.  GaAs‐AlxGa1‐xAs injection lasers with distributed Bragg reflectors , 1975 .

[13]  M. Gottlieb,et al.  Integrated optical detector array, waveguide, and modulator based on silicon technology , 1977 .

[14]  W. Streifer,et al.  Silicon nitride films on silicon for optical waveguides. , 1977, Applied optics.

[15]  R. Logan,et al.  Monolithically integrated AlGaAs double heterostructure optical components , 1974 .

[16]  R. A. Logan,et al.  Electro‐optic frequency‐ and polarization‐modulated injection laser , 1980 .

[17]  Novel metal‐clad optical components and method of isolating high‐index substrates for forming integrated optical circuits , 1975 .

[18]  K. Aiki,et al.  A frequency-multiplexing light source with monolithically integrated distributed-feedback diode lasers , 1976, IEEE Journal of Quantum Electronics.

[19]  J. Merz,et al.  Integrated GaAs‐AlxGa1−xAs injection lasers and detectors with etched reflectors , 1977 .

[20]  Kenichi Iga,et al.  Chemical Etching of InP and GaInAsP for Fabricating Laser Diodes and Integrated Optical Circuits , 1980 .

[21]  R. Howard,et al.  Novel deposit/spin waveguide interconnection (DSWI) technique for semiconductor integrated optics , 1982 .

[22]  Shyh Wang,et al.  Principles of distributed feedback and distributed Bragg-reflector lasers , 1974 .

[23]  James L. Merz Monolithic Integration Of Optical Sources And Detectors , 1981, Optics & Photonics.

[24]  F. K. Reinhart Prospects Of Monolithic Optical Integration , 1981, Photonics West - Lasers and Applications in Science and Engineering.

[25]  Kenichi Iga,et al.  Monolithic two‐section GaInAsP/InP active‐optical‐resonator devices formed by reactive ion etching , 1981 .

[26]  Integrated optical silicon photodiode array , 1976, 1975 International Electron Devices Meeting.

[27]  Katsuyuki Utaka,et al.  Monolithic Integration of Laser and Amplifier/Detector by Twin-Guide Structure , 1978 .

[28]  Shigehisa Arai,et al.  GaInAsP/InP integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide , 1981 .

[29]  K. Hayashi,et al.  A multi-hetero-AIGaAs laser with integrated twin guide , 1975, Proceedings of the IEEE.

[30]  K. Mukai,et al.  Planar multilevel interconnection technology employing a polyimide , 1978 .

[31]  InGaAsP/InP buried‐heterostructure lasers (λ = 1.5 μm) with chemically etched mirrors , 1981 .

[32]  Kenichi Iga,et al.  GaInAsP/InP stripe‐geometry laser with a reactive‐ion‐etched facet , 1980 .