Transverse electric and transverse magnetic polarization active intersubband transitions in narrow InGaAs quantum wells

Polarization‐resolved infrared spectroscopy has been used to demonstrate the existence of transverse electric (TE) and transverse magnetic (TM) active intersubband transitions in lattice‐matched, unstrained In0.53Ga0.47As/In0.52Al0.48As and strained In0.7Ga0.3As/AlAs quantum wells grown by molecular beam epitaxy on Fe‐doped semi‐insulating InP (001) substrates. It is shown that a previously reported intersubband absorption peak at 0.3 eV in a 4.0‐nm wide, lattice‐matched InGaAs/InAlAs quantum well can be resolved into two peaks active for TE and TM polarizations, respectively, with a 10 meV splitting between them. Bound to quasibound state transition at 0.59 eV (2.1 μm) for a narrow, 2.8‐nm‐wide InGaAs quantum well has also been observed. Group symmetry analyses considering D2d symmetry, tetragonal perturbation of local crystal and strain deformation potential, and interface roughness of the ternary quantum‐well structure is proposed to explain the polarization selection rules, and the Stark splitting in ...

[1]  J. Bajaj,et al.  Well‐width dependence of photoinduced intersubband absorption in GaAs/AlGaAs multi quantum wells , 1992 .

[2]  Clifton G. Fonstad,et al.  Peak‐to‐valley current ratios as high as 50:1 at room temperature in pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes , 1992 .

[3]  B. F. Levine,et al.  Lattice‐matched InGaAsP/InP long‐wavelength quantum well infrared photodetectors , 1992 .

[4]  L. D. Flesner,et al.  Novel GaAs/AlGaAs multiquantum-well Schottky-junction device and its photovoltaic LWIR detection , 1992 .

[5]  Kang L. Wang,et al.  Normal incidence infrared detector using p‐type SiGe/Si multiple quantum wells , 1992 .

[6]  J. M. Kuo,et al.  Extended long‐wavelength λ=11–15‐μm GaAs/AlxGa1−xAs quantum‐well infrared photodetectors , 1991 .

[7]  Liu,et al.  Measurements of intersubband photocurrents from quantum wells in asymmetrical-double-barrier structures. , 1991, Physical review. B, Condensed matter.

[8]  S. R. Andrews,et al.  Experimental and theoretical studies of the performance of quantum‐well infrared photodetectors , 1991 .

[9]  Kawamura,et al.  Intersubband absorption in In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells. , 1991, Physical review. B, Condensed matter.

[10]  Y. Kawamura,et al.  Intersubband absorption in highly strained InGaAs/InAlAs multiquantum wells , 1990 .

[11]  T. Elsaesser,et al.  Intersubband absorption in a modulation‐doped Ga0.47In0.53As/Al0.48In0.52As multiple quantum well structure , 1988 .

[12]  R. Malik,et al.  InGaAs/InAlAs multiquantum well intersubband absorption at a wavelength of λ= 4.4 μm , 1988 .

[13]  L. C. West,et al.  First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well , 1985 .

[14]  J. Hensel,et al.  Quantum resonances in the valence bands of germanium. I. Theoretical considerations , 1974 .

[15]  Richard A. Soref,et al.  Carrier-induced change in refractive index of InP, GaAs and InGaAsP , 1990 .

[16]  Christian Mailhiot,et al.  Theory of semiconductor superlattice electronic structure , 1990 .